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Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

机译：低温（100℃）催化CVD制备的氮化硅膜的电性能与工艺参数的相关性

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Se Myoung Noh; Wan-Shick Hong;
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1. Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) [J] . Kikkawa A., Morimoto R., Izumi A., Thin Solid Films . 2003,第1a2期

机译：通过催化化学气相沉积在催化氮化的Si（100）上沉积的氮化硅膜的电性能
2. Suppression of Electrical Breakdown in Silicon Nitride Films Deposited by Catalytic Chemical Vapor Deposition at Temperatures Below 200℃ [J] . Kyoung-Min Lee, Wan-Shick Hong Journal of nanoscience and nanotechnology . 2011,第1期

机译：低于200℃的催化化学气相沉积法沉积氮化硅膜的电击穿抑制
3. (Pb_(1-x)Ba_x)TiO_3 THIN FILMS PREPARED BY LIQUID DELIVERY MOCVD: INFLUENCE OF THE PROCESS PARAMETERS ON FILM FORMATION AND ELECTRICAL PROPERTIES [J] . S. RITTER, S. HOFFMANN-EIFERT, D. BOLTEN Ferroelectrics: Letters Section . 2002,第1期

机译：液体传递气相沉积制备的（Pb_（1-x）Ba_x）TiO_3薄膜：工艺参数对成膜和电学性能的影响
4. PROPERTIES OF SILICON NITRIDE FILMS PREPARED BY COMBINATION OF CATALYTIC-NITRIDATION AND CATALYTIC-CVD [C] . A. Izumi, A. Kikkawa, K. Higashimine, Symposium on Amorphous and Nanocrystalline Silicon - Based Films; 20030422-20030425; San Francisco,CA; US . 2003

机译：催化氮化与催化化学气相沉积相结合制备的氮化硅膜的性能
5. Integration of Vanadium Dioxide Films on Aluminum Trioxide and Silicon (100) Substrates: Structure-Property Correlations and Applications. [D] . Yang, Tsung-Han. 2011

机译：在三氧化二铝和硅（100）衬底上集成二氧化钒薄膜：结构性质的相关性和应用。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

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7. Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films [O] . Huang, H., Winchester, K. J., Suvorova, A., 2006

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8. Structure and properties of heteroepitaxial Pb(Zr(sub 0.35)Ti(sub 0.65))O(sub 3)/SrRuO(sub 3) multilayer thin films on SrTiO(sub 3)(100) prepared by MOCVD and RF sputtering [R] . Foster, C. M. , Csencsits, R. , Bai, G. R. , 1995

机译：通过mOCVD和RF溅射制备的srTiO（sub 3）（100）上异质外延pb（Zr（sub 0.35）Ti（sub 0.65））O（sub 3）/ srRuO（sub 3）多层薄膜的结构和性质

Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

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