This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for the deposition of HgCdTe epilayers, with a wide range of compositions, used for uncooled infrared detectors. Good compositional and thickness uniformity was achieved on epilayers grown on 2-in-diameter, low-cost (100) GaAs wafers. Most growth was performed on substrates, which were misoriented from (100) by between 2° and 4° in order to minimize growth defects. The large lattice mismatch between GaAs and HgCdTe required the usage of a CdTe buffer layer. The CdTe (111) B buffer layer growth was enforced by suitable nucleation procedure, based on (100) GaAs substrate annealing in a Te-rich atmosphere prior to the buffer deposition. Secondary-ion mass spectrometry (SIMS) showed that ethyl iodide (EI) and tris(dimethylamino)arsenic (TDMAAs) were stable donor and acceptor dopants, respectively. Fully doped (111) HgCdTe heterostructures were grown in order to investigate the devices’ performance in the 3–5 µm infrared band. The uniqueness of the presented technology manifests in a lack of the necessity of time-consuming and troublesome ex situ annealing.
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机译：本文介绍了军队工业大学应用物理学研究所和Vigo Systems Sa的中波红外（MWIR）探测器的现状，金属有机化学气相沉积（MOCVD）技术是沉积HGCDTE的非常方便的工具具有广泛组合物的癫痫，用于未冷却的红外探测器。在2直径，低成本（100）GaAs晶片上生长的脱落剂上实现了良好的组成和厚度均匀性。大多数生长是对底物进行的，其在2°和4°之间从（100）中的误导，以最大限度地减少生长缺陷。 GaAs和HGCDTE之间的大格位错配件需要使用CDTE缓冲层。通过合适的成核方法强制CDTE（111）B缓冲层生长，基于（100）GaAs衬底在缓冲沉积之前在TE的大气中退火。二次离子质谱（SIMS）表明乙基碘（EI）和三（二甲基氨基）砷（TDMAAS）分别是稳定的供体和受体掺杂剂。完全掺杂（111）HGCDTE异质结构，以便研究3-5μm红外带中的器件的性能。所提出的技术的独特性表现出缺乏耗时和麻烦的前所未有的必要性的必要性。
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