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Some like it flat: decoupled h-BN monolayer substrates for aligned graphene growth

机译:有些人喜欢它平坦:解耦的h-BN单层基板,用于对齐的石墨烯生长

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摘要

On the path to functional graphene electronics, suitable templates for chemical vapor deposition (CVD) growth of high-mobility graphene are of great interest. Among various substrates, hexagonal boron nitride (h-BN) has established itself as one of the most promising candidates. The nanomesh, a h-BN monolayer grown on the Rh(111) surface where the lattice mismatch of h-BN and rhodium leads to a characteristic corrugation of h-BN, offers an interesting graphene/h-BN interface, different from flat graphene/h-BN systems hitherto studied. In this report, we describe a two-step CVD process for graphene formation on h-BN/Rh(111) at millibar pressures and describe the influence of the surface texture on the CVD process. During a first exposure to the 3-pentanone precursor, carbon atoms are incorporated in the rhodium subsurface, which leads to decoupling of the h-BN layer from the Rh(111) surface. This is reflected in the electronic band structure, where the corrugation-induced splitting of the h-BN bands vanishes. In a second 3-pentanone exposure, a graphene layer is formed on the flat h-BN layer, evidenced by the appearance of the characteristic linear dispersion of its π band. The graphene layer grows incommensurate and highly oriented. The formation of graphene/h-BN on rhodium opens the door to scalable production of well-aligned heterostacks since single-crystalline thin-film Rh substrates are available in large dimensions.
机译:在功能石墨烯电子学的发展道路上,用于高迁移率石墨烯化学气相沉积(CVD)生长的合适模板引起了人们的极大兴趣。在各种基材中,六方氮化硼(h-BN)已成为最有前途的候选材料之一。纳米网是生长在Rh(111)表面上的h-BN单层,其中h-BN和铑的晶格失配导致h-BN形成特征波纹,提供了一种有趣的石墨烯/ h-BN界面,与平面石墨烯不同迄今为止,已经研究了/ h-BN系统。在此报告中,我们描述了在毫巴压力下在h-BN / Rh(111)上形成石墨烯的两步CVD工艺,并描述了表面纹理对CVD工艺的影响。在第一次暴露于3-戊酮前体期间,碳原子并入铑次表面,这导致h-BN层与Rh(111)表面解耦。这反映在电子能带结构中,在这种结构中,波纹诱导的h-BN能带分裂消失了。在第二次3-戊酮曝光中,在平坦的h-BN层上形成石墨烯层,这可通过其π谱带的特征线性色散出现来证明。石墨烯层不相称且高度取向。在铑上形成石墨烯/ h-BN为单晶薄膜Rh衬底可提供大尺寸尺寸,为大规模生产良好排列的异质堆叠打开了大门。

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