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MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH AND SUBSTRATE GRAPHENE GROWTH AND MANUFACTURING DEVICE

机译:基质石墨烯生长的制造方法以及基质石墨烯的生长和制造装置

摘要

It provides a kind of manufacture graphene to grow on the method for substrate, includes the following steps: that (one) prepares metal layer on substrate; (2) etching gas and conduction electrons cyclotron resonance plasma enhancing chemical vapour deposition technique (ECR-CVD) of carbonaceous gas are provided; (3) supply etching gas is used for when supply carbonaceous gas is to grow graphene metal layer; D grows graphene in substrate, without metal layer by continuously removing the metal layer of all metals by simultaneously continuously carrying out ECR-CVD steps c in etching process. ;The 2016 of copyright KIPO submissions
机译:它提供了一种在衬底上生长石墨烯的方法,包括以下步骤:(一)在衬底上制备金属层; (2)提供了含碳气体的蚀刻气体和导电电子回旋共振等离子体增强化学气相沉积技术(ECR-CVD); (3)当供应含碳气体用以生长石墨烯金属层时,使用供应蚀刻气体。 D通过在蚀刻过程中同时连续地执行ECR-CVD步骤c来连续去除所有金属的金属层,从而在没有金属层的衬底中生长石墨烯。 ; 2016年版权KIPO提交文件

著录项

  • 公开/公告号KR20160098817A

    专利类型

  • 公开/公告日2016-08-19

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150020896

  • 发明设计人 LEE YOUN TEK;

    申请日2015-02-11

  • 分类号C01B31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:13:44

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