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CoCrMo alloy treated by floating potential plasma assisted nitriding and plasma based ion implantation: Influence of the hydrogen content and of the ion energy on the nitrogen incorporation

机译:浮动电位等离子体辅助氮化和基于等离子体的离子注入处理的CoCrMo合金:氢含量和离子能量对氮结合的影响

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摘要

Nitriding was performed on a medical grade CoCrMo alloy at 400°C in N2 or N2-H2 atmosphere at a working pressure of 0.84Pa for 2h. Various surface treatment techniques were used to incorporate nitrogen into the CoCrMo alloy: without any plasma assistance, by floating potential radio-frequency plasma assisted nitriding (FPPAN), by plasma based ion implantation (PBII) with several high voltage accelerations (up to 20kV). Without plasma activation, no nitrogen is incorporated in the CoCrMo. On the contrary, all the plasma or PBII treated samples show the formation of a nitrogen-rich f.c.c. γN phase. The layer nitrided over few microns has a nitrogen composition ranging from 30at.% to about 20at.% near the nitrided layer-substrate interface, with an enhanced surface microhardness. Hydrogen is found to enhance the nitriding efficiency. Without hydrogen, a high voltage polarization provides a supplementary amount of implanted nitrogen available for further diffusion and the sputtering of the surface passive oxide. So, with limited high voltages, thicker layers with higher amounts of nitrogen can be achieved by PBII compared to plasma nitriding. However, with higher voltages, the sputtering becomes too important and the nitride layer is thinner. © 2010 Elsevier B.V.
机译:在N2或N2-H2气氛中,在400°C的医用级CoCrMo合金上,在0.84Pa的工作压力下进行2h氮化。各种表面处理技术被用于将氮混入CoCrMo合金中:在没有任何等离子体辅助的情况下,通过浮动电位射频等离子体辅助氮化(FPPAN),通过基于等离子体的离子注入(PBII),并具有多个高压加速度(最高20kV) 。没有等离子体活化,CoCrMo中不会掺入氮。相反,所有经血浆或PBII处理的样品均显示出富氮f.c.c的形成。 γN相。在几微米范围内被氮化的层在被氮化的层-衬底界面附近具有在30at。%至约20at。%范围内的氮成分,具有增强的表面显微硬度。发现氢可以提高氮化效率。在没有氢的情况下,高电压极化可提供补充量的注入氮,可用于进一步扩散和溅射表面无源氧化物。因此,在有限的高电压下,与等离子氮化相比,PBII可以实现氮含量更高的较厚层。但是,随着电压的升高,溅射变得非常重要,并且氮化物层更薄。 ©2010 Elsevier B.V.

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