INTRINSIC-BARRIER TRANSISTOR TECHNIQUES (SILICON) FIRST QUARTERLY REPORT 15 JULY 1957 to 15 OCTOBER 1957

摘要

The design theory for a 200 mc, 100 mc silicon transistor Indi-cates that this east bs en n-p-i-a, intrinsic-barrier transistor. The fabrication of e suitable structure requires the use of solid-state diffusion. Processes have been developed for a 100 mc, lover power transistor* This work was performed prior to the present contract, but its status is, of necessity, described in this report because it represents the starting point for the development of intrinsic-barrier transistors. These processes are shown to be in good control and npn transistor characteristics are giv.