INTRINSIC-BARRIER TRANSISTOR TECHNIQUES (SILICON) THIRD QUARTERLY REPORT 15 JANUARY 1958 to 15 APRIL 1957

摘要

the laboratory processing of n-p-i-n silicon transistors is dis-cussed along with several notes on current experiments and structure evaluation methods. Recent units have set the objective specification of producing 100 TO* of power output at 200 mcps when operated as a self-excited oscillator} however, the efficiency la low (13$)* and steps are being taken to correct this. Various electrical, tests, in¬cluding high-power oscillators at 70 and 100 mcps, switching charac¬teristics, and high ambient temperature tests are described.