INTRINSIC-BARRIER TRANSISTOR TECHNIQUES (SILICON) SIXTH QUARTERLY REPORT 15 OCTOBER 1958 TO 15 JANUARY 1959

摘要

The effect of emitter stripe width on performance of the VHF in-trinsic barrier silicon transistor is analyzed. Additional design criteria are also discussed. These results indicate that a realiz¬able design may be expected to yield an fmax between 520 and 825 mcps, which should be adequate for attainment of the objective specification of 30％ oscillator efficiency at 400 mcps.nCharacterization methods are being improved, and measurement fa¬cilities and test circuits expanded to permit increasingly complete and accurate measurement of the parameters and performance of the units being produced.