Electron spin – lattice relaxation in phosphorus doped silicon has been investigated over a magnetic field range of 0-11,000 oersteds, a temperature range of 1.25°K., and a concentration range of 1014p/cc. to 3×1016 p/cc.nThe theoretical origins of the mechanisms are discussed. A theory is proposed to explain the concentration dependent τs mechanism, according to which rapidly relaxing close pairs of phosphorus atoms, which are few in number, relax the spins of the large number of isolated phosphorus atoms via a spin diffusion process. Experiments supporting this hypothesis are presented.
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