An Evaluation of Scattering Parameter Techniques as Applied to Field-Effect Transistor Characterization

摘要

The analysis of transistors as linear circuit elements can conveniently be accomplished by treating the transistor as a two-port network, and then characterizing that network under small-signal conditions by use of a two-by-two matrix. The elements of the matrix are parameters completely defining the voltage-current relationships of the two-port network at any one frequency. In the past, commonly used parameters for transistor characterization, have been impedance, or z, parameters; admittance, or y, parameters; and hybrid, or h, parameters. Recently, however, the use of scattering, or s, parameters has been suggested. Developments in electrical instrumentation have made the measurement of scattering parameters practical and convenient, and it has been claimed that scattering parameter characterization offers certain advantages over other types of characterization. It was the purpose of the study to evaluate the advantages claimed for scattering parameters, and to determine the applicability of the scattering parameter measurement technique to the measurement of field-effect transistor parameters. (Author)