Picosecond Photoconductive Sampling Measurements of the Scattering Parameters of High-Speed Field-Effect Transistors

摘要

Described are stimulus-response measurement techniques based on the photoconductive generation and sampling of picosecond electrical pulses for measuring the high-frequency scattering parameters of high-speed microwave devices. These techniques are compared with more conventional microwave diagnostic techniques. Keywords: Gallium arsenide field-effect transistor, Microwave devices, Photoconductive sampling, Picosecond optoelectronics, Scattering parameters. (JES)