Silicon Schottky Photovoltaic Diodes for Solar Energy Conversion.

摘要

A 12.2% Cr-MIS solar cell was fabricated on (100) p-type,single-crystal Si. An efficiency of 8.8% was recorded on Wacker polycrystalline Si. Surface-state density values range from 1.5 x 10to the 11th power/sq cm-eV to 1.5 x 10to the 13th power/sq cm-eV for MIS diodes on (100) single-crystal, Wacker polycrystalline,IBM ribbon,and EFG ribbon Si. These data correspond to Vsub oc = 0.25-0.60 V on similar photovoltaic cells. Columnar, 5-micrometer crystallites have been obtained on e-beam-deposited Si films having a 20-30micrometer thickness. Rectification and photovoltaic response have been observed. Other studies include ellipsometry,Auger analysis,environmental effects,heating effects,optical design,antireflection coatings,radiation effects,and new sources of Si.