Semiconductor Measurement Technology:Automated Scanning Low-Energy Electron Probe (ASLEEP) for Semiconductor Wafer Diagnostics.

摘要

The report summarizes the results of a three-year effort in the development of a computer Automated Scanning Low-Energy Electron Probe (ASLEEP) for semiconductor wafer diagnostics. Experiments designed to explore the measurement capabilities of ASLEEP for measurements on silicon,gallium arsenide,and indium phosphide are described. Four areas were emphasized: (1) semiconductor resistivity, (2) semiconductor defect density, (3) lateral inhomogeneities,and (4) oxide uniformity. Although oxide charging problems limit the utility of ASLEEP in its present form for silicon,defects and lateral inhomogeneities could be readily detected in gallium arsenide and indium phosphide.