Transient Three-Dimensional Numerical Simulation of Microelectronic Semiconductor Devices

摘要

A program for developing a three-dimensional transient algorithm for simulating transport in nonlinear semiconductor devices is summarized. The formulation, implementation, and testing of an algorithm for the self-consistent solution of Poisson's equation and the bipolar semiconductor drift and diffusion equations for nonlinear transport in silicon devices are addressed. Model calculations are presented for a reverse bias PN junction device with unequal cathode and anode regions. It is concluded that three-dimensional transient simulations can become a very important ingredient in computer-aided design programs of semiconductor and multiterminal devices for VLSI and VHSIC applications.