New Photolithographic Processes for Small Structures: Introduction and Trial of Electron Beam Lithography

摘要

Electron beam lithography was introduced for mask making in very large scale integration circuits. The vector-scan electron beam pattern generator Philips EBPG3 is described. The appropriate process line and the test patterns were followed by an extensive representation of mask processes for several electron-sensitive resists. Two programs that convert pattern data from the computer aided design format into the EBPG format as well as exposure experiments on silicon slices are described. Advantages as compared to light optics are more flexibility in producing circuits, shorter mask making time, and lower mask defect density.