Improved Silicon Film Production Using Laser-Generated SiH3* Radicals

摘要

Research was undertaken to determine (1) whether SiH3 radicals could be efficiently formed by multiple infrared photon dissociation (MIRD) of aryl and alkyl silanes and (2) whether, once formed, the radicals could be used either to directly form amorphous silicon films or to form disilane for use in conventional plasma or chemical vapor deposition techniques. Results reveal that the organo silanes undergo four-center unimolecular elimination to form monosilane and the associated alkene. Further characterization of the electrical and photoelectrical properties of the films formed is needed.