Chemical vapor deposition (CVD) of silicon dioxide films using oxygen- silicon source reactants and a free radical promoter

摘要

A low temperature chemical vapor deposition method for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of between 250 C. (482. degree. F.) and 420 C. (788 F.) in a vacuum having a pressure of from about 0.1 to about 2.0 torr and introducing, together with a silane and oxygen or oxygen-containing silane, a free radical promoter (e.g., di-t-butylperoxide, t-butylhydroperoxide, or n- butylnitrite) as a co-reactant into the vacuum.