Reactions of Laser-Generated CF2 (Free Radicals) on Silicon and Silicon Oxide Surfaces

摘要

The reactions of CF2, generated by UV laser photolysis of gas phase precursors, have been investigated for single crystal silicon and thermally deposited silicon oxide surfaces. CF2 deposits intact on the oxide surface, but undergoes partial dissociative chemisorption on clean silicon surfaces. Neither silicon nor silicon oxide are spontaneously etched by CF2 under the conditions of these experiments. Silicon, Silicon oxide, Fluorocarbon, Chemisorption, Reprints. (mjm)