Study of the Formation of Surface Films: Critical Conditions for Growth. Progress Report, June 1, 1981-May 31, 1982

摘要

Significant results obtained during the last year (January to December 1981) from the experimental study of the critical conditions for the growth of surface films on silicon are presented. Due to the extensive technological interest in the growth of protective SiO sub 2 films on Si, the effort this last year has been to a large extent devoted to further studies of the reaction of O sub 2 with Si(111) and (100), and to the development of a theoretical model to explain the results. Preliminary studies have also been undertaken on the H sub 2 O + Si(100) and the CH sub 4 + Si(100) reactions.