Study of the Formation of Surface Films: Critical Conditions for Growth. Progress Report, June 1, 1982-May 31, 1983

摘要

Significant results obtained during the last year (January to December 1982) from our experimental study of the critical conditions for the growth of surface films on silicon and on tantalum are presented. The study of the oxidation of the Si(111) and (100) surfaces using H sub 2 O as oxidant have been essentially completed. Significant progress has been made on a study of the enhancement of the oxidation of silicon at high substrate doping levels. We are working on a theoretical model to explain these results. In addition, preliminary results have been obtained on the interaction of H sub 2 O with polycrystalline Ta foils. (ERA citation 08:021159)