ACCELERATED TEST TECHNIQUES FOR MICROCIRCUITS - Evaluation of High Temperature (473°K - 573°K) Accelerated Life Test Techniques as Effective Microcircuit Screening Methods

摘要

The application of high temperature accelerated test techniques was shown to be an effective method of microcircuit defect screening. Comprehensive microcircuit evaluations and a series of high tempera?ture (473°K to 573°K) life tests demonstrated that a freak or early failure population of surface contaminated devices could be completely screened 1n thirty two hours of test at an ambient temperature of 523°K Equivalent screening at 398°K, as prescribed by current Military and NASA specifications, would have required in excess of 1500 hours of test. All testing was accomplished with a Texas Instruments' 54L10, low power trlple-3 Input NAND gate manufactured with a Titanium-Tungsten (T1-W), Gold (Au) metallization system.A number of design and/or manufacturing anomalies were also noted with the Ti-W, Au metallization system.Further study of the exact nature and cause(s) of these anomalies is recommended prior to the use of microcircuits with T1-W, Au metallization in long life/high reliability applications.