The Application of Chemical Etching to the Failure Analysis of Semiconductor Devices (Literature Survey and Premilinary Experiments). Volume 1: Phase 1 Report

摘要

The nature and composition of a variety of passivation overcoatings are reviewed including methods of deposition, postdeposition treatment, and properties, such as density and internal stress. The removal of overglazes is considered. Several etchant systems are discussed and etch rate data are presented. Etching mechanisms are explained. The Dry-Ox process is evaluated. This system, utilizing anhydrous hydrogen fluoride, seems the most suitable etching procedure available. Aluminum damage, occurring during device processing, in use, or caused by passivation layer removal, is also discussed along with electrochemical and chemical etching of silicon and of metals. A method for chemical etching analysis of single integrated circuit devices is outlined and techniques for the microscopic examination of junctions are listed. Handling and safety aspects of hydrofluoric acid based etchants are considered.