UNIQUE CAPABILITIES OF CHEMICALLY-ASSISTED ION-BEAM ETCHING FOR COMPOUND SEMICONDUCTOR DEVICES

机译：复合半导体器件化学辅助离子束刻蚀的独特能力

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This paper reviews the technology of chemically assisted ion beam etching of compound semiconductor devices.

机译：本文综述了化合物半导体器件的化学辅助离子束刻蚀技术。

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来源
《Proceedings vol.2004-06; Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and State-of-the-Art Program on Compound Semiconductors International Symposia and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(U》|2004年|P.35-43|共9页
会议地点 HonoluluHI(US)
作者
G. Allen Vawter; Charles Alford;
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作者单位

Sandia National Laboratories Albuquerque, NM 87185-0603, USA;

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原文格式 PDF
正文语种 eng
中图分类材料;
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专利

1. Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system [J] . F. Eberhard, M. Schauler, E. Deichsel Microelectronic Engineering . 1999,第1a4期

机译：在化学辅助离子束刻蚀系统中GaAs和GaN刻蚀行为的比较
2. Chemically-assisted ion-beam etching of (AlGa)As/GaAsf lattice damage and removal by in-situ Cl_2 treatment [J] . J. Daleiden, R. Kiefer, S. Kluβmann Microelectronic Engineering . 1999,第1期

机译：化学辅助离子束蚀刻（AlGa）As / GaAsf晶格损伤并通过原位Cl_2处理去除
3. A System for Precision Reactive Ion-Beam Etching of Nanostructures for Field-Emission Devices [J] . Yu. P. Maishev, Yu. P. Terentev, S. L. Shevchuk, Russian Microelectronics . 2010,第4期

机译：用于场发射器件的纳米结构的精密反应离子束刻蚀系统
4. UNIQUE CAPABILITIES OF CHEMICALLY-ASSISTED ION-BEAM ETCHING FOR COMPOUND SEMICONDUCTOR DEVICES [C] . G. Allen Vawter, Charles Alford Proceedings of the International Symposium on State-of-the-Art-Program on Compound Semiconductors . 2004

机译：化合物半导体器件的化学辅助离子束蚀刻的独特能力
5. Electron and ion-beam characterization of nitride semiconductor devices. [D] . Parish, Chad Michael. 2006

机译：氮化物半导体器件的电子和离子束表征。
6. Semiconductors: Interface Design Principles for High‐Performance Organic Semiconductor Devices (Adv. Sci. 6/2015) [O] . Wanyi Nie, Gautam Gupta, Brian K. Crone, 2015

机译：半导体：高性能有机半导体器件的接口设计原理（Adv。Sci。6/2015）
7. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices [O] . Crawford, M.H., Chow, W.W., Wright, A.F., 1999

机译：宽带隙化合物半导体将推出新型半导体器件
8. Plasma and Ion Etching for Failure Analysis. Part 2. The Etching of Plastic Encapsulant and Other Semiconductor Device Materials, Using the Technics Giga Etch 100-E Plasma Etch System [R] . Hardman, M., Mapper, D., Farren, J., 1986

机译：等离子体和离子蚀刻用于失效分析。第2部分。使用Technics Giga Etch 100-E等离子蚀刻系统对塑料封装和其他半导体器件材料进行蚀刻

UNIQUE CAPABILITIES OF CHEMICALLY-ASSISTED ION-BEAM ETCHING FOR COMPOUND SEMICONDUCTOR DEVICES

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