Process and apparatus for growing a crystal ribbon

摘要

A process and apparatus is disclosed for growing a crystal ribbon of a substance of theoretically infinite length from a melt of the substance. A pair of fixedly positioned edge defining members are partially submerged into the melt so as to break the surface of the melt at a predetermined distance from one another. The edge defining members are wettable by the melt and the predetermined distance substantially corresponds to the width of the crystal ribbon to be grown. The crystal ribbon is grown by contacting the surface of the melt with a seed ribbon between the edge defining members whereby a meniscus of the melt is established on the seed ribbon. The meniscus is stabilized by the meniscus of the melt on the edge defining members. Pulling the seed crystal ribbon away from the melt results in continuous growth of the crystal ribbon.