首页> 外国专利> HIGH PURITY COMPOSITE CZOCHRALSKI PROCESS FURNACE COMPONENT AND SEMICONDUCTOR CRYSTAL GROWING APPARATUS COMPRISING THE HIGH PURITY COMPOSITE AND CZOCRALSKI CRYSTAL GROWING PROCESS USING THE SEMICONDUCTOR CRYSTAL GROWING APPARATUS

HIGH PURITY COMPOSITE CZOCHRALSKI PROCESS FURNACE COMPONENT AND SEMICONDUCTOR CRYSTAL GROWING APPARATUS COMPRISING THE HIGH PURITY COMPOSITE AND CZOCRALSKI CRYSTAL GROWING PROCESS USING THE SEMICONDUCTOR CRYSTAL GROWING APPARATUS

机译:高纯度复合材料CZOCHRALSKI工艺炉组件和半导体晶体生长装置

摘要

The Czochralski process furnace component comprises a high purity, semiconductor standard composite comprising carbon fibers reinforced with carbon matrix with a degree of metal impurity below the detection limit of an inductively coupled plasma spectrometer. The process of producing the component includes heat treatment of the carbon fiber and the component.
机译:切克劳斯基加工炉组件包括高纯度的半导体标准复合材料,该复合材料包含用碳基质增强的碳纤维,且金属杂质的程度低于感应耦合等离子体光谱仪的检测极限。产生部件的过程包括碳纤维和部件的热处理。

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