Czochralski or floating zone crystal growth process, for growing silicon single crystal for semiconductor purposes, comprises supplying polycrystalline silicon in a consumable silicon tube

摘要

Czochralski or floating zone silicon single crystal growth, comprises polycrystalline silicon supply in a consumable silicon tube (1). Silicon single crystal growth by the Czochralski method involves supplying a crucible (2) with polycrystalline silicon through a silicon tube (1) having a height (Hp) greater than the crucible height (Hs) and a diameter (Dp) smaller than the free inside diameter (Ds) of the crucible, the tube being melted together with the contained polycrystalline silicon. AN Independent claim is also included for silicon single crystal growth by the floating zone method in which polycrystalline silicon is introduced in the form of a silicon tube (1) filled with polycrystalline lumps and granules.