Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

摘要

Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.