High Power Semiconductor Laser Source for Space Applications. Executive Summary

摘要

Semiconductor laser sources for optical communication links between geostationary and low Earth orbiting satellites were investigated. Phase locked arrays of coupled stripes or related devices offer single mode operation at much lower optical and current density than other techniques. The highest powers are expected using GaAlAs, the best reliability using InGaAsP. Use of very thin highly doped p-InP buffer layers in planar growth, wide mesas, long cavities, and facet coating for DCPBH lasers are suggested. Continuous output power values up to 340 mW can be generated by unoptimized multimode InGaAsP lasers emitting at 1.3 micrometers. It should be possible to generate continuous power levels greater than 1000 mW by optimizing facet reflectivity and thermal impedance. The Y-coupled array is the most promising concept. The addition of flared output guides, and the positioning of the couplers close to the facet with the larger number of emitters, should improve performance.