Role of Emitter States in Magnetotunneling Through Double-Barrier Resonant-Tunneling Diodes at High Magnetic Fields

摘要

By applying pulsed high magnetic fields up to 40 T perpendicular (B(subperpendicular)) and parallel (B(sub parallel) is parallel to I) to the current direction, a distinct role of emitter states in the magneto-tunneling processes through resonant tunneling diodes has been investigated. The B(sub perpendicular)