Heteroepitaxy of Wide Bandgap Ternary Semiconductors

摘要

The past decade has brought a significant increase in the research effort devoted to heteroepitaxy of ternary cp structure compound and alloys. Thus far this effort has focused at III-IV compound substrates, but is likely to include in future increasingly research on silicon, and, to a lesser extent, germanium-based heterostructures. Both double and multiple heterostructures employing nearly lattice-matched III-V/II-IV-V2 combinations have been made with excellent interfacial properties so that the realization of confined heterostructures is bound to happen, in the near future. Amazingly well behaved defect structures with wide energy gaps have been discovered as a result of the present effort concerning the heteroepitary of ternary compound semiconductors and alloys. They warrant further exploration. In the opinion of the author, such an exploratory effort should include also a thorough evaluation of composite structures that may result in useful new materials.