Effect of Variations in the Doping Profiles on the Properties of Doped MultipleQuantum Well Avalanche Photodiodes

摘要

The purpose of this study is to use both theoretical and experimental evidence todetermine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between