Modeling of InGaAsSb-Based Avalanche Photodetectors for 2-Micron Wavelengths

摘要

The main focus of this research is to study and evaluate the potential of InGaAsSb-AlGaAsSb based 2 micron avalanche photo-detectors. The photodetector contains a separate absorption and multiplication region (SAM) structure. The analysis has mainly been done to understand the electrical response characteristics of the devices existing at NASA, and to evaluate alternate structures proposed. Calculating the current flow for the existing detector structure, on the basis of its energy band diagram, is important. This analysis also helps to find shortcomings in the existing detector structure. It is shown that, unfortunately, the existing structure cannot lead to strong multiplication or voltage dependent gain. Two alternate structures are suggested, that could overcome the inherent flaws, and help achieve improved performance. These devices are obtained through modifications of the original structure, which include varying the doping levels, and changing the thicknesses of detector sub-regions. The results of our study are presented and discussed.