Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

摘要

SWIR ADP 320 x 256 FPAs based on p-i-n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n (+) type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p-i-n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2-4.