短波红外阈场助式光电阴极p-InGaAs/p-InP异质结设计与仿真

摘要

One type of shortwave infrared threshold transmission field-assisted photocathode was reviewed, because of its heterojunction structure, the photon absorption layer and electron-emitting layer were separated from each other. On the basis of significant infrared photon absorption effect and high efficient carrier transmission effect, the influence of field-assisted voltage impact upon the energy band structure and the short-wave infrared threshold photocathode were modeled and simulated. This study demonstrates that the schottky barrier bias voltage at least reaches to 8 V to eliminate the effect of p-InGaAs/p-InP heterojunction barrier. And under this condition, in order to get smaller leakage current, the thickness of In0.53Ga0.47As absorption layer is 2m, the thickness of InP electron-emitting layer is 1m, and both dopant level are 1×1016cm-3.%针对一种短波红外阈透射式光阴极，简要介绍其光子吸收层和电子发射层分离式异质结结构后，结合异质结两侧对红外光子显著吸收效应参数和对电子高效输运特性参数进行建模，详细研究了场助电压对p-p型异质结能带结构和对短波红外阈透射式光电阴极的影响。研究结果显示：Schottky势垒偏压至少要达到8 V才能较好消除p-InGaAs/p-InP异质结的势垒影响。此时，为达到较小的漏电流， In0.53Ga0.47As光吸收层厚度2m，InP发射层厚度1m，掺杂浓度均为1×1016 cm－3。