320 x 256 avalanche array photodetector on the basis of ternary alloys of the A(3)B(5) group with an InGaAs absorbing layer and an InAlAs barrier layer

摘要

320 x 256 avalanche array photodetector on the basis ternary alloys of the A(3)B(5) group with an InGaAs absorbing (in the band of 0.9-1.7 mu m) layer and InAlAs barrier layer is studied. The array of 320 x 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.