Avalanche Photodiode Long Wavelength Photodetector

摘要

The present invention relates to an avalanche photodiode type long-wavelength photodetector, the feature of which is an avalanche photodiode type long-wavelength photodetector, the PN junction to In _0.52 Al _0.48 As which has a larger energy band gap than InP and lattice matching to InP Since the breakdown voltage is increased to reduce the leakage current due to tunneling, the present invention forms a PN junction at In _0.52 Al _0.48 As having a large energy bandgap, resulting in a high breakdown voltage and consequently an edge at a low voltage. Breakdown can be avoided, making it possible to manufacture high-performance APD photodetectors. In the conventional long-wavelength InP photodetectors, the PN junction is formed and amplified in InP, while the band gap is larger than InP in the newly designed photodetector. in _0.52 Al _0.48 As in the case of the breakdown voltage due to the avalanche phenomenon by giving to form a PN junction to form a PN junction on InP beam Increased by 1.2 times to a maximum operating voltage increases Because of this, a stable, there is the effect to be achieved to that the operating characteristics of high sensitivity.