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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C.

机译：实验观察4H-siC JFET IC的电气耐久性，工作温度范围为500°C至700°C。

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Neudeck, P. G.; Spry, D. J.; Chen, L.; Lukco, D.; Chang, C. W.; Beheim, G. M.;
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年度 2016
页码 1-4
总页数 4
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正文语种 eng
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1. Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 ℃ to 700 ℃ [J] . Philip G. Neudeck, David J. Spry, Liangyu Chen, Materials science forum . 2017,第期

机译：在500℃至700℃的温度下实验观察到的4H-SiC JFET IC的电耐久性
2. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 ℃ to 500 ℃ [J] . Philip G. Neudeck, David J. Spry, Liangyu Chen Materials science forum . 2016,第期

机译：25℃至500℃4H-SiC JFET阈值电压体偏置效应的实验和理论研究
3. Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect [J] . David J. Spry, Philip G. Neudeck, Liangyu Chen, IEEE Electron Device Letters . 2016,第5期

机译：具有两级互连的4H-SiC JFET IC的延长的500°C演示
4. Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C [C] . Philip G. Neudeck, David J. Spry, Liangyu Chen, . 2016

机译：实验观察到的在500°C至700°C下工作的4H-SiC JFET IC的电气耐久性
5. PLC control systems: Operating principles, hardware configuration and closed-loop feedback control system design, featuring the Allen-Bradley SLC 500 Modular Controller Technical Training Workstation and Rockwell Automation RSLogix 500 Project Development Software. [D] . Turner, Jeffrey Robert. 2000

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6. 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes [O] . Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, 2021

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7. Structural and electrical characterization of the 4H-SiC based junction field effect transistor (JFET) [O] . Shili, K., Ben Karoui, M., Gharbi, R., 2013

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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C.

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