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Test on 2n2369, npn silicon epitaxial transistors manufactured by fairchild semiconductor

机译：在由Fairchild半导体制造的2n2369，npn硅外延晶体管上进行测试

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Electric resistivity of carbon resistor material for calculating static response characteristics of carbon bolometer element

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作者
Haskins, F. E.; Trempe, L. E.;
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年度 1964
页码 1-125
总页数 125
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
BOLOMETERS; CARBON; ELECTRICAL PROPERTIES; ELECTRICAL RESISTIVITY; ENVIRONMENTAL TESTS; LOW TEMPERATURE; N-P-N JUNCTIONS; P-N JUNCTIONS; RESISTORS; SEMICONDUCTORS (MATERIALS); SILICON JUNCTIONS; SILICON TRANSISTORS; STATIC CHARACTERISTICS; ELECTRIC PROPERTY; ENVIRONMENTAL TESTING; N-P-N JUNCTION; SILICON JUNCTION; TRANSISTOR;

机译：红外探测器;碳;电气特性;电阻率;环境试验;低温; N-p-N结; p-N结;电阻器;半导体（材料）;硅结;硅晶体管;静态特征;电力;环境试验; N-p-N结;硅胶接头;晶体管;

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专利

1. Electrical Characteristics and Crystal Quality Analysis of Thin-Body (100) Channe Silicon-on-lnsulator Metal-Oxide-Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process [J] . Toshiaki Iwamatsu, Takashi Terada, Kozo Ishikawa, Japanese journal of applied physics . 2009,第4issue2期

机译：使用两步提升硅外延工艺的薄型（100）Channe绝缘体上硅金属氧化物半导体场效应晶体管的电学特性和晶体质量分析
2. Pure Germanium Epitaxial Growth on Thin Strained Silicon-Germanium Graded Layers on Bulk Silicon Substrate for High-Mobility Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . S.DEY, S.JOSHI, D.GARCIA-GUTIERREZ Journal of Electronic Materials . 2006,第8期

机译：高迁移率沟道金属氧化物半导体场效应晶体管的体硅基板上应变硅-锗梯度薄层上的纯锗外延生长
3. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors [J] . S. Dey, S. Joshi, D. Garcia-Gutierrez, Journal of Electronic Materials . 2006,第8期

机译：在高迁移率沟道金属氧化物半导体场效应晶体管的体硅衬底上的应变硅锗梯度薄层上纯锗外延生长
4. Epitaxial liftoff as a method-of manufacturing large area crystalline silicon transistor arrays for AMLCD's [C] . Sickmiller, M., Yablonovitch, . 1995

机译：外延剥离作为制造AMLCD的大面积晶体硅晶体管阵列的一种方法
5. Design, analysis and experimental study of RF 4H-silicon carbide npn bipolar junction transistors. [D] . Zhao, Feng. 2004

机译：RF 4H-碳化硅npn双极结晶体管的设计，分析和实验研究。
6. Retraction: Integrating Epitaxial-Like Pb(ZrTi)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor [O] . Jae Hyo Park, Hyung Yoon Kim, Gil Su Jang, -1

机译：缩回：将类似外延的Pb（ZrTi）O3薄膜集成到硅中用于下一代铁电场效应晶体管
7. Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors [O] . W. Mizubayashi, S. Migita, Y. Morita, 2012

机译：使用超薄绝缘体上硅金属氧化物半导体场效应晶体管中的外延NiSi2晶化精确控制结位置

Test on 2n2369, npn silicon epitaxial transistors manufactured by fairchild semiconductor

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