首页> 美国政府科技报告 >The nature of a moving dislocation band found when zinc is diffused into gallium arsenide

【24h】

The nature of a moving dislocation band found when zinc is diffused into gallium arsenide

机译：当锌扩散到砷化镓中时发现移动的位错带的性质

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Moving dislocation band and p-n junction planarity with zinc as diffusant in gallium arsenide

著录项

作者
Kim, H. B.; Longini, R. L.;
展开▼
作者单位

展开▼
年度 1965
页码 1-34
总页数 34
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DIFFUSION; GALLIUM ARSENIDES; INTERSTITIALS; P-N JUNCTIONS; SUBSTITUTES; ZINC; DIFFUSION; DISLOCATION; GALLIUM ARSENIDE; P-N JUNCTION; ZINC;

机译：扩散; GaLLIUm aRsENIDEs;插页广告; p-N结;代用品;锌;扩散;错位; GaLLIUm aRsENIDE; p-N JUNCTION;锌;

相似文献

外文文献
中文文献
专利

1. DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) AND PHOTO LUMIENSCENCE (PL) STUDIES ON MOLECULAR BEAM EPITAXY (MBE) GALLIUM ARSENIDE (GaAs)/GALLIUM ALUMINUM ARSENIDE (GaAlAs) QUANTUM WELLS UNDER PRESSURE: IDENTIFICATION OF BAND DISCONTINUITIES, WELL LOCATION [J] . ASHOK K. SAXENA Romanian journal of physics . 2006,第3a4期

机译：压力下分子束表位（MBE）砷化镓（GaAs）/砷化铝铝（GaAlAs）量子阱的深层瞬态光谱法（DLTS）和光致发光（PL）研究：谱带不连续性的鉴定，
2. Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory [J] . J. A. Owolabi, M. Y. Onimisi, S. G. Abdu, Computational Chemistry . 2016,第3期

机译：密度泛函理论测定砷化镓和砷化铝的能带结构
3. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO) [J] . Seong-Uk Yang, Woo-Shik Jung, In-Yeal Lee, Materials Research Bulletin . 2014,第feba期

机译：使用铟镓锌氧化物（IGZO）在低n型砷化镓（GaAs）上形成欧姆接触的过程
4. THE NATURE OF DISLOCATION LOOPS IN NEUTRON IRRADIATED GALLIUM ARSENIDE [C] . J. H. Neethling, A. Janse van Vuuren Annual Conference of the Microscopy Society of Southern Africa . 2011

机译：中子辐射镓砷化镓的脱位环的性质
5. Analysis of zincblende-phase gallium nitride, cubic-phase silicon carbide, and gallium arsenide MESFETs including a full-band Monte Carlo simulator [D] . Weber, Michael 2005

机译：闪锌矿相氮化镓，立方相碳化硅和砷化镓MESFET的分析，包括全频带Monte Carlo模拟器
6. Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide [O] . Beata Ziaja, Nikita Medvedev, Victor Tkachenko, -1

机译：X射线激发的砷化镓中带隙收缩和电子晶格热化的时间分辨观察
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。

The nature of a moving dislocation band found when zinc is diffused into gallium arsenide

摘要

著录项

相似文献

相关主题

期刊订阅