method for the insertion of diffuse in gallium arsenide and zinc halfgeleiderinrichting produced by application of this method.

摘要

1,227,985. Alloys; coating by vapour deposition. WESTERN ELECTRIC CO. Inc. May 24, 1968 [May 31, 1967], No.24994/68. Headings C7A and C7F. [Also in Division H1] A source for diffusing Zn into GaAs consists of a composition falling within the triangular area A formed by joining the following points in the Zn-Ga-As ternary phase diagram:- 1% Zn, 49% Ga, 50% As 59% Zn, 1% Ga, 40% As 33% Zn, 1% Ga, 66% As where the proportions are in atomic percentage. Diffusion may be effected by sealing a GaAs body (single-crystal, 100 oriented, Te-doped, in the example) and the diffusion source in an evacuated chamber and heating to 500‹-744‹C. Resulting junctions may be used in such semi-conductor devices as electro-luminescent diodes, Impatt diode oscillators, varactors, switching diodes, and laser modulators.