Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices

摘要

Results are presented on the characterization and testing of lattice mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. The authors also report on the effect of lattice matched InAsP and InAlAs back surface field on the performance of the TPV cells.