基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器

摘要

Back-illuminated 640 × 1 linear InGaAs detector arrays were fabricated on the In0.78 Al0.22 As/In0.78Ga0.22 As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2. 36 μm and 1. 92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω · cm2 and the quantum efficiency of the peak wavelength reaches to 37. 5%. Otherwise, the average peak detectivity of linear detector array reaches to 2. 01 × 10 cm-Hz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0. 6% for 1 ms of integrate time.%在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上,采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片,研究了探测器光电性能.结果表明,室温下单元器件响应截止波长和峰值波长分别为2.36 μm和1.92 μm,平均优值因子(R0A)为16.0Ω·cm2,峰值量子效率达到了37.5％；在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W,响应非均匀性为8.77％,盲元率约为0.6％.