中心距10μm截止波长2.6μm的延伸波长InGaAs焦平面探测器

摘要

A sub-10 μm InGaAs (IGA) focal plane array (FPA),with cut-off wavelength of 2.6 μm has been developed.The pixel pitch is reduced significantly comparing with that of reported extended wavelength IGA FPAs.To verify the feasibility of technology,the performance of sub-10 μm IGA FPA was tested and compared with 30 μm pixel pitch IGA FPA,which was fabricated from the same epitaxial material.The sub-10 μm IGAFPA exhibits high performances in terms of dark current (0.45 nA@VR =10 mV) and R0A (14.7 Ω · cm2) at room temperature.Its quantum efficiency can reach 63％.The comparable performances to 30 μm pixel pitch IGA FPA illustrate that the sub-10 μm IGA FPA fulfils the needs of large formats (＞ 1 K × 1 K) and high densities in extended wavelength IGA detectors.%采用ICP(inductively coupled plasma etching)刻蚀与湿法腐蚀相结合的方式,研制了像元中心距为10μm、截止波长2.6μm的p-i-n型10×10元延伸波长InGaAs探测器.不同温度下的电流—电压特性研究和激活能分析,显示了器件优异的暗电流特性.在室温下,-10 mV偏压时器件的暗电流和优质因子R0A分别为0.45 nA和14.7 Ω·cm2,量子效率可达到63％.为了证实像元中心距减小并未影响器件性能,与同种材料中心距30 μm的InGaAs焦平面阵列进行了对比分析.相似的实验结果进一步证明了工艺的可行性,对今后实现高密度、大面阵延伸波长InGaAs探测器具有重要的指导意义.