Advances in the reduction and compensation of film stress in high- reflectance multilayer coatings for extreme ultraviolet lithography applications

摘要

Due to the stringent surface figure requirements for the multilayer-coated optics in an extreme ultraviolet (EUV) projection lithography system, it is desirable to minimize deformation due to the multilayer film stress. However, the stress must be reduced or compensated without reducing EUV reflectivity, since the reflectivity has a strong impact on the throughput of a EUV lithography tool. In this work we identify and evaluate several leading techniques for stress reduction and compensation as applied to Mo/Si and Mo/Be multilayer films. The measured film stress for Mo/Si films with EUV reflectances near 67.4% at 13.4 nm is approximately - 420 MPa (compressive), while it is approximately +330 MPa (tensile) for Mo/Be films with EUV reflectances near 69.4% at 11.4 nm. Varying the Mo-to-Si ratio can be used to reduce the stress to near zero levels, but at a large loss in EUV reflectance (> 20%). The technique of varying the base pressure (impurity level) yielded a 10% decrease in stress with a 2% decrease in reflectance for our multilayers. Post-deposition annealing was performed and it was observed that while the cost in reflectance is relatively high (3.5%) to bring the stress to near zero levels (i.e., reduce by 1 00%), the stress can be reduced by 75% with only a 1.3% drop in reflectivity at annealing temperatures near 200(degrees)C. A study of annealing during Mo/Si deposition was also performed; however, no practical advantage was observed by heating during deposition. A new non-thermal (athermal) buffer-layer technique was developed to compensate for the effects of stress. Using this technique with amorphous silicon and Mo/Be buffer-layers it was possible to obtain Mo/Be and Mo/Si multilayer films with a near zero net film stress and less than a 1% loss in reflectivity. For example a Mo/Be film with 68.7% reflectivity at 11.4 nm and a Mo/Si film with 66.5% reflectivity at 13.3 nm were produced with net stress values less than 30 MPa.