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Production method of the reflected type multilayer thin film mirror for extreme ultraviolet radiation exposure process which uses the lithography technology of the power microscope between the atoms
Production method of the reflected type multilayer thin film mirror for extreme ultraviolet radiation exposure process which uses the lithography technology of the power microscope between the atoms
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机译:反射型多层薄膜镜的制造方法,该方法利用了原子间的功率显微镜的光刻技术,用于极端紫外线照射工艺
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摘要
The present invention relates to a method for manufacturing a reflective multi-layered thin film mirror for an extreme ultraviolet radiation (EUV) exposure process that is one of the next generation exposure process masks using an atomic force microscope (AFM). This reflective multi-layered thin film mirror for extreme ultraviolet radiation (EUV) exposure process allows metal oxide structures with fixed height and ' width to be obtained using anodic oxidization phenomenon between the cantilever tip of a atomic force microscope and an absorber material during the patterning of an absorber layer on a multi-layered thin film of a substrate, followed by forming the ultra-fine line width absorber patterns via etching of the metal oxide structure. Use of the manufacturing process of this invention is advantageous in manufacturing of extreme ultraviolet radiation exposure mask mirrors with high resolution and in manufacturing of reflective multi-layered thin film mirrors with minute absorber pattern sizes (less than 20 nm line width) compared to traditional manufacturing methods.
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