Ga Self-Diffusion in Isotopically Enriched GaAs Heterostructures Doped with Si211 and Zn

摘要

The tremendous advances in semiconductor process and device technology over the211u001elast few decades have been much chronicled, and such reviews usually focus on the 211u001ecommercial success of silicon based solid state integrated circuits. While it is 211u001eundisputed that Si is commercially the most utilized semiconductor, GaAs and 211u001erelated compound semiconductors have been the standard materials for 211u001eoptoelectronic devices such as light emitting diodes and lasers, high electron 211u001emobility transistors promise of allowing integrated circuits which operate using 211u001e(HEMT's) and hold the photons in addition to electrons and holes. Among the 211u001eadvantages of GaAs based materials for such advanced devices is a direct band gap 211u001eallowing single event emission and absorption of photons, the possibility to 211u001ecreate layered structures with varying band gaps and alloy composition, and band 211u001egap energies covering the full spectrum of visible light.