HIGH TEMPERATURE OXIDATION OF GADOLINIUM AND DYSPROSIUM UNDER CONTROLLED OXYGEN PARTIAL PRESSURE

摘要

The oxidation of gadolinium and dysprosium was studied under controlled oxygen partial pressures in the temperature range 727-1327°C. The oxygen partial pressure range was 10-0.3 to 10-14.5 atm. Weight gain as a function of time was measured through the use of a thermobalance.nFrom the plots of rational scaling rate constant versusnIn PQ7 it may be inferred that Gd203 exhibits p-type semicon-ductivity at oxygen-pressures-above 10-9.4 atm. in the temper¬ature range 727-1177°C and that Dy203 exhibits p-type semi-conductivity at oxygen pressures above 10-11.3 atm. in the temperature range 727-1327°C.