PROCESSES AND PROCEDURES FOR]-A THIN FILM MULTILEVEL HYBRID CIRCUIT METALLIZATION SYSTEM BASED ON W-AU/Si02/Ai/Si02

摘要

This report is a documentation of the processes and procedures developed for the deposition and photodefinition of a W-Au/siO2/Al/SiO hybrid circuit metalliza¬tion system for the SLL Micro Actuator. The metallization system affords a high degree of miniaturization and permits effective interconnection of a mixture of semiconductor devices and passive components with both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Sputtered tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the second level conductor. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossovers. Was in the insu¬lating layer permit tungsten-aluminum interconnections where desired. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding pads. Substrates used were polished sapphire and fine grained alumina. The metallization is capable of withstanding processing tempera¬tures up to 400°C for short times.