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High dielectric Constant Thin Films in TiO2,BaO-TiO2,and BaO-SrO-TiO2 Systems via Photochemical Metal Organic Deposition (PMOD) Processes

机译:通过光化学金属有机沉积(PMOD)工艺在TiO2,BaO-TiO2和BaO-SRO-TiO2系统中的高介电常数薄膜

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The inclusion of metal oxides and mixed metal oxides possessing higher dielectric constants than more traditional insulators such as silicon oxide into microelectronic devices is currently an important topic in a variety of areas.The metal oxide deposition described in this work combines the ease ofspin-on processing and direct photo patterning of a organ ometallic precursor films to overcome a number of limitations encountered with other dielectric deposition methods.For example,the inclusion of embedded passive devices such as capacitors into printed wiring boards (PWB) is currently of considerable importance in the field of packaging technology for system-on-package (SOP) applications.
机译:包含具有更高介电常数的金属氧化物和混合金属氧化物比更传统的绝缘体如诸如氧化硅的传统绝缘体进入微电子器件,目前是各种领域的重要课题。本工作中描述的金属氧化物沉积结合了精简素加工的易于处理并直接照片图案化器官ometalliC前体膜的克服了许多与其他介电沉积方法遇到的局限性。例如,将嵌入式被动装置诸如电容器的嵌入式被动装置包含在印刷线路板(PWB)中,目前在该领域具有相当大的重要性包装技术对包装(SOP)应用的影响。

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