Electron Spin Resonance Study of Interface States Induced by Electron Injection in Metal-Oxide-Semiconductor Devices

摘要

Structural damage at the Si/SiO sub 2 interface in metal-oxide-semiconductor devices resulting from the emission of electrons from the silicon into the oxide involves an amphoteric trivalent silicon defect, termed P/sub b/. The P/sub b/ center is responsible for the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO sub 2 interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxide is in some way related to the creation of the P/sub b/ center interface state defects. In addition, dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture. (ERA citation 10:023040)